Hutagalung, Sabar D. and Aziz, Azma F. Abdul and Yaacob, Khatijah A. (2007) Growth of Crooked Silicon Nanowires by Carbothermal Evaporation. Proceedings of the 7th IEEE . pp. 827-831.
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Abstract
Silicon nanowires (SiNWs) were synthesized by carbothermal evaporation technique from starting materials of silicon powder mixed with activated carbon. The evaporated silicon is carried by flowing inert gas and collected on Si(111) substrate. The results show that SiNWs were formed in groups are straight at some part and vertically at the other part with each group grew in the same direction. Overlapping in the growth direction produced another group of nanowires with crooked morphology. The nanowires were formed in groups are straight at some part and vertically at the other part with each group grew in the same direction. Overlapping in the growth direction produced another group of nanowires with crooked morphology.
| Item Type: | Article |
|---|---|
| Subjects: | Material Science > Nanostructured materials |
| ID Code: | 4552 |
| Deposited By: | CSMNT |
| Deposited On: | 07 Apr 2009 10:19 |
| Last Modified: | 07 Apr 2009 10:19 |
Available Versions of this Item
- Growth of Crooked Silicon Nanowires by Carbothermal Evaporation. (deposited 14 Jan 2009 13:55)
- Growth of Crooked Silicon Nanowires by Carbothermal Evaporation. (deposited 07 Apr 2009 10:19) [Currently Displayed]
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