Nano Archive

Growth of Crooked Silicon Nanowires by Carbothermal Evaporation

Hutagalung, Sabar D. and Aziz, Azma F. Abdul and Yaacob, Khatijah A. (2007) Growth of Crooked Silicon Nanowires by Carbothermal Evaporation. Proceedings of the 7th IEEE . pp. 827-831.

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Abstract

Silicon nanowires (SiNWs) were synthesized by carbothermal evaporation technique from starting materials of silicon powder mixed with activated carbon. The evaporated silicon is carried by flowing inert gas and collected on Si(111) substrate. The results show that SiNWs were formed in groups are straight at some part and vertically at the other part with each group grew in the same direction. Overlapping in the growth direction produced another group of nanowires with crooked morphology. The nanowires were formed in groups are straight at some part and vertically at the other part with each group grew in the same direction. Overlapping in the growth direction produced another group of nanowires with crooked morphology.

Item Type:Article
Subjects:Material Science > Nanostructured materials
ID Code:4552
Deposited By:CSMNT
Deposited On:07 Apr 2009 10:19
Last Modified:07 Apr 2009 10:19

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