Balaji, S. and Mohan, S. and Muthu, D. V. S. and Sood, A. K. (2007) Ultra thin films of nanocrystalline Ge studied by AFM and interference enhanced Raman scattering. Journal of Chemical Sciences, 115 (5-6). pp. 401-410. ISSN 0974-3626 (Print) 0973-7103 (Online)
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Initial growth stages of the ultra thin films of germanium (Ge) prepared by ion beam sputter deposition have been studied using atomic force microscope (AFM) and interference enhanced Raman scattering. The growth of the films follows Volmer-Weber growth mechanism. Analysis of the AFM images shows that Ostwald ripening of the grains occurs as the thickness of the film increases. Raman spectra of the Ge films reveal phonon confinement along the growth direction and show that the misfit strain is relieved for film thickness greater than 4 nm.
|Subjects:||Physical Science > Nanophysics|
Analytical Science > Microscopy and probe methods
Material Science > Nanofabrication processes and tools
Analytical Science > Nanotechnology for sensing and actuating
Physical Science > Nano objects
Technology > Manufacturing processes for nanotechnology
Material Science > Nanostructured materials
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Physics|
Faculty of Engineering, Science and Mathematics > School of Chemistry
|Deposited On:||03 Apr 2009 05:21|
|Last Modified:||03 Apr 2009 05:21|
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