Nano Archive

Ultra thin films of nanocrystalline Ge studied by AFM and interference enhanced Raman scattering

Balaji, S. and Mohan, S. and Muthu, D. V. S. and Sood, A. K. (2007) Ultra thin films of nanocrystalline Ge studied by AFM and interference enhanced Raman scattering. Journal of Chemical Sciences, 115 (5-6). pp. 401-410. ISSN 0974-3626 (Print) 0973-7103 (Online)

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Official URL: http://www.springerlink.com/content/nq7175615101x7...

Abstract

Initial growth stages of the ultra thin films of germanium (Ge) prepared by ion beam sputter deposition have been studied using atomic force microscope (AFM) and interference enhanced Raman scattering. The growth of the films follows Volmer-Weber growth mechanism. Analysis of the AFM images shows that Ostwald ripening of the grains occurs as the thickness of the film increases. Raman spectra of the Ge films reveal phonon confinement along the growth direction and show that the misfit strain is relieved for film thickness greater than 4 nm.

Item Type:Article
Subjects:Physical Science > Nanophysics
Analytical Science > Microscopy and probe methods
Material Science > Nanofabrication processes and tools
Analytical Science > Nanotechnology for sensing and actuating
Physical Science > Nano objects
Technology > Manufacturing processes for nanotechnology
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:4363
Deposited By:JNCASR
Deposited On:03 Apr 2009 05:21
Last Modified:03 Apr 2009 05:21

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