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Surfactant-mediated growth of ultrathin Ge and Si films and their interfaces: Interference-enhanced Raman study

Kanakaraju, S and Sood, A. K. and Mohan, S (2000) Surfactant-mediated growth of ultrathin Ge and Si films and their interfaces: Interference-enhanced Raman study. Phys. Rev. B, 61 (12). 8334 -8340.

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Official URL: http://prola.aps.org/abstract/PRB/v61/i12/p8334_1

Abstract

We report on the growth and interfaces of ultrathin polycrystalline Ge and Si films when they are grown on each other using ion beam sputter deposition with and without surfactant at different growth temperatures, studied using interference enhanced Raman spectroscopy.  Ge films grown on Si without surfactant show Ge segregation at the interfaces forming an alloy of GexSi1-x as indicated by the Ge-Si Raman mode. However, use of Sb as surfactant strongly suppresses the intermixing. Also Si films grown on Ge have been observed to crystallize at low-substrate temperatures in the presence of the surfactant. In contrast to the growth of Ge on Si, the intermixing in the growth of Si on Ge is observed to be negligibly small even without the surfactant layer.

Item Type:Article
Subjects:Physical Science > Nanophysics
Material Science > Nanofabrication processes and tools
Physical Science > Nano objects
Technology > Manufacturing processes for nanotechnology
Material Science > Nanostructured materials
Physical Science > Photonics
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:4361
Deposited By:JNCASR
Deposited On:03 Apr 2009 06:35
Last Modified:03 Apr 2009 12:31

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