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Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors

Hong, Woong-Ki and Sohn, Jung Inn and Hwang, Dae-Kue and Kwon, Soon-Shin and Jo, Gunho and Song, Sunghoon and Kim, Seong-Min and Ko, Hang-Ju and Park, Seong-Ju and Welland, Mark E. and Lee, Takhee (2008) Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors. NANO LETTERS, 8 (3). pp. 950-956.

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Official URL: http://pubs.acs.org/doi/abs/10.1021/nl0731116

Abstract

Surface-architecture-control led ZnO nanowires were grown using a vapor transport method on various ZnO buffer film coated c-plane sapphire substrates with or without Au catalysts. The ZnO nanowires that were grown showed two different types of geometric properties: corrugated ZnO nanowires having a relatively smaller diameter and a strong deep-level emission photoluminescence (PL) peak and smooth ZnO nanowires having a relatively larger diameter and a weak deep-level emission PL peak. The surface morphology and size-dependent tunable electronic transport properties of the ZnO nanowires were characterized using a nanowire field effect transistor (FET) device structure. The FETs made from smooth ZnO nanowires with a larger diameter exhibited negative threshold voltages, indicating n-channel depletion-mode behavior, whereas those made from corrugated ZnO nanowires with a smaller diameter had positive threshold voltages, indicating n-channel enhancement-mode behavior.

Item Type:Article
Subjects:Physical Science > Nanoelectronics
Engineering > Nanotechnology applications in ICT
ID Code:435
Deposited By:Farnush Anwar
Deposited On:12 Dec 2008 09:47
Last Modified:12 Dec 2008 09:47

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