Nano Archive

Synthesis and characterization of silicon carbide, silicon oxynitride and silicon nitride nanowires

Gundiah, Gautam and Madhvan, G. V. and Govindaraj , Achutharao and Seikh, Md. Motin and Rao, C. N. R. (2002) Synthesis and characterization of silicon carbide, silicon oxynitride and silicon nitride nanowires. Journal of Materials Chemistry, 12 . pp. 1606-1611.

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Abstract

Several methods have been employed to synthesize SiC nanowires. The methods include heating silica gel or fumed silica with activated carbon in a reducing atmosphere, the carbon particles being produced in situ in one of the methods. The simplest method to obtain -SiC nanowires involves heating silica gel with activated carbon at 1360 °C in H2 or NH3. The same reaction, if carried out in the presence of catalytic iron particles, at 1200 °C gives -Si3N4 nanowires and Si2N2O nanowires at 1100 °C. Another method to obtain Si3N4 nanowires is to heat multi-walled carbon nanotubes with silica gel at 1360 °C in an atmosphere of NH3. In the presence of catalytic Fe particles, this method yields -Si3N4 nanowires in pure form.

Item Type:Article
Subjects:Material Science > Nanochemistry
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:4052
Deposited By:JNCASR
Deposited On:03 Feb 2009 04:08
Last Modified:06 Apr 2009 15:37

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