Nano Archive

Study and development of a silicon infrared diode operating under forward bias

Tahchi, M. El and Nassar, E. and Mialhe, P. (2005) Study and development of a silicon infrared diode operating under forward bias. Microelectronics Journal, 36 (3-6). 260 - 263.

Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.

Official URL:


This work presents an advance in optoelectronic silicon-based devices, since a theoretical and experimental study by the authors of an inexpensive transformation process by which a commercially available silicon p-n junction has been made to emit infrared light. The authors introduce a [`]nano-layer' degradation to aid in the recombination processes necessary to obtain a silicon light emitting process. Silicon diodes are known as a very weak light emitter or even no-light emitting devices. Several techniques have been used to force silicon to emit light, the results was light emission in all colors, varying from visible to infrared. But the efficiency of the device remains very low compared to the costs of fabrication. In our paper, the intensity of the emitted light is an increasing function of the injected current, instead of the attenuation reported by others.

Item Type:Article
Additional Information:Low Dimensional Structures and Devices Conference
Uncontrolled Keywords:p-n junction
Subjects:Physical Science > Nano objects
Physical Science > Nanoelectronics
Physical Science > Photonics
ID Code:4045
Deposited By:SPI
Deposited On:27 Jan 2009 14:33
Last Modified:27 Jan 2009 14:33

Repository Staff Only: item control page