Nano Archive

An ion track based approach to nano- and micro-electronics

Hoppe, K and Fahrner, W. R. and Fink, D and Dhamodoran, S and Petrov, A and Chandra, A and Saad, A and Faupel, F and Chakravadhanula, V. S. K. and Zaporotchenko, V (2008) An ion track based approach to nano- and micro-electronics. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 266 (8). 1642 - 1646.

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Since a decade the concept emerged to use conducting ion tracks in nano- and micro-electronics, due to their small dimensions. Whereas in a few cases the ion tracks themselves are already conducting, in the majority of all cases the ion tracks have first to be etched to form nanopores, into which (semi)conducting matter is inserted thereafter. The MOS-type hybrid structures “TEAMS” and “TEMPOS”, consisting of silicon/insulator bilayer systems into which such conducting tracks had been inserted and which are eventually combined with nanoclusters (NCs), NC/polymer composites or carbon nanotubes, have proven to be of special electronic interest due to their great versatility. Electronic elements based on this concept combine many peculiar properties such as negative differential resistances (NDR), sensing, AND/OR logics and light emission in an unconventional way. For demonstration purpose, NDRs were used for signal amplification up to a factor 24. Network theory has been used to estimate the minimum possible size of these structures and the geometrical distributions of the internal current flows. Suitably tailored electronic circuits make use of these structures for practical applications.

Item Type:Article
Additional Information:Ion Beam Analysis - Proceedings of the Eighteenth International Conference on Ion Beam Analysis, Eighteenth International Conference on Ion Beam Analysis
Uncontrolled Keywords:Network theory
Subjects:Physical Science > Nanoelectronics
Engineering > Nanotechnology applications in ICT
ID Code:4041
Deposited By:SPI
Deposited On:27 Jan 2009 14:40
Last Modified:19 Feb 2009 09:04

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