Nano Archive

Preparation and characterization of oriented III–V nitride thin films by nebulized spray pyrolysis

Raju, A. R. and Sardar, Kripasindhu and Rao, C. N. R. (2001) Preparation and characterization of oriented III–V nitride thin films by nebulized spray pyrolysis. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 4 (6). pp. 549-553.

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Abstract

Thin films of GaN, InGaN, AlGaN and AlN on Si(1 0 0) as well as on Al2O3(0 0 0 1) single crystalline substrates have been deposited at 1123, 1023, 1173 and 1173 K, respectively, by employing the simple inexpensive technique of nebulized spray pyrolysis. GaN films deposited on Si are polycrystalline where as the films deposited on Al2O3 are epitaxial. GaN epitaxial films show cathodoluminescence characteristics. Photoluminescence studies show that all the films are of high quality.

Item Type:Article
Subjects:Material Science > Nanochemistry
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:3943
Deposited By:JNCASR
Deposited On:03 Feb 2009 04:20
Last Modified:12 Feb 2009 11:45

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