Nano Archive

Fabrication of nanopillars by nanosphere lithography

Cheung, C. L. and Nikolic, R. J. and Reinhardt, C. E. and Wang, T. F. (2006) Fabrication of nanopillars by nanosphere lithography. NANOTECHNOLOGY, 17 (5). pp. 1339-1343.

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Official URL: http://www.iop.org/EJ/abstract/0957-4484/17/5/028

Abstract

A low cost nanosphere lithography method for patterning and generation of semiconductor nanostructures provides a potential alternative to the conventional top-down fabrication techniques. Forests of silicon pillars of sub-500 nm diameter and with an aspect ratio up to 10 were fabricated using a combination of the nanosphere lithography and deep reactive ion etching techniques. The nanosphere etch mask coated silicon substrates were etched using oxygen plasma and a time-multiplexed `Bosch' process to produce nanopillars of different length, diameter and separation. Scanning electron microscopy data indicate that the silicon etch rates with the nanoscale etch masks decrease linearly with increasing aspect ratio of the resulting etch structures.

Item Type:Article
Subjects:Material Science > Nanofabrication processes and tools
ID Code:3841
Deposited By:SPI
Deposited On:21 Jan 2009 17:26
Last Modified:19 Feb 2009 10:04

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