Kim, HJ and Lee, CH and Kim, DW and Yi, GC (2006) Fabrication and electrical characteristics of dual-gate ZnO nanorod metal-oxide semiconductor field-effect transistors. NANOTECHNOLOGY, 17 (11). S327-S331.
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Official URL: http://www.iop.org/EJ/abstract/0957-4484/17/11/S16
We fabricated dual-gate ZnO nanorod metal - oxide semiconductor field-effect transistors(MOSFETs) where a Si substrate with a 200 nm thick SiO2 layer was used as a bottom-gate and a Au electrode with a 100 nm thick SiO2 layer was used as a top-gate. From current - voltage characteristic curves of the nanorod MOSFETs, the top-gate mode operation exhibited significantly enhanced device characteristics compared with the bottom-gate case. A switch current ON/OFF ratio of the top-gate mode (10(5) - 10(7)) was at least one order of magnitude larger than that of the bottom-gate mode (10(4) - 10(6)). Normalized transconductance, one of the key transistor parameters, was also drastically increased from 0.34 mu S mu m(-1) for the bottom-gate to 2.4 mu S mu m(-1) for the top-gate mode. The enhanced device performance can be explained in terms of geometric field enhancement and the resulting efficient gating effect for the top-gate mode geometry.
|Subjects:||Technology > Manufacturing processes for nanotechnology|
Physical Science > Nanoelectronics
|Deposited On:||26 Jan 2009 14:52|
|Last Modified:||26 Jan 2009 14:52|
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