Effects of sidewall functionalization on conducting properties of single wall carbon nanotubes

Abstract

We investigated the conducting properties of functionalized single wall nanotubes (SWNTs) with a finite addend concentration. Robust differences are found between monovalent and divalent additions. For the former a small number of addends can significantly disrupt the ballistic conductance of nanotubes near the Fermi level. As the concentration increases the conductance decreases rapidly and approaches zero at addend to C ratio around 25%. In contrast, divalent functionalizations have weak effects, and the nanotube quantum conductance remains above 50% of that of a perfect tube even for an addend concentration as large as 25%. These differences can be attributed to the formation of impurity states near the Fermi level for monovalent additions, while divalent addends create impurity states far away from the Fermi level.