Nano Archive

Effects of sidewall functionalization on conducting properties of single wall carbon nanotubes

Park, H and Zhao, JJ and Lu, JP (2006) Effects of sidewall functionalization on conducting properties of single wall carbon nanotubes. NANO LETTERS, 6 (5). pp. 916-919.

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Official URL: http://dx.doi.org/10.1021/nl052488d

Abstract

We investigated the conducting properties of functionalized single wall nanotubes (SWNTs) with a finite addend concentration. Robust differences are found between monovalent and divalent additions. For the former a small number of addends can significantly disrupt the ballistic conductance of nanotubes near the Fermi level. As the concentration increases the conductance decreases rapidly and approaches zero at addend to C ratio around 25%. In contrast, divalent functionalizations have weak effects, and the nanotube quantum conductance remains above 50% of that of a perfect tube even for an addend concentration as large as 25%. These differences can be attributed to the formation of impurity states near the Fermi level for monovalent additions, while divalent addends create impurity states far away from the Fermi level.

Item Type:Article
Subjects:Material Science > Nanostructured materials
ID Code:3819
Deposited By:SPI
Deposited On:22 Jan 2009 10:00
Last Modified:22 Jan 2009 10:00

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