Stoica, Toma and Meijers, Ralph J. and Calarco, Raffaella and Richter, Thomas and Sutter, Eli and Lueth, Hans (2006) Photoluminescence and intrinsic properties of MBE-grown InN nanowires. NANO LETTERS, 6 (7). pp. 1541-1547.
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Official URL: http://dx.doi.org/10.1021/nl060547x
The influence of the growth parameters on the photoluminescence (PL) spectra has been investigated for samples with columnar morphology, either with InN columns on original substrates or as free-standing nanowires. Valuable information about band gap and electron concentration was obtained by line shape analysis. Optical band gaps between 730 and 750 meV and electron concentrations of 8 x 10(17) to 6 x 10(18) cm(-3) were derived from the fit of the PL spectra of different samples. The crystalline quality of the wires was investigated by high-resolution transmission electron microscopy.
|Subjects:||Physical Science > Nanoelectronics|
Material Science > Nanostructured materials
|Deposited On:||22 Jan 2009 10:12|
|Last Modified:||22 Jan 2009 10:12|
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