Nano Archive

Photoluminescence and intrinsic properties of MBE-grown InN nanowires

Stoica, Toma and Meijers, Ralph J. and Calarco, Raffaella and Richter, Thomas and Sutter, Eli and Lueth, Hans (2006) Photoluminescence and intrinsic properties of MBE-grown InN nanowires. NANO LETTERS, 6 (7). pp. 1541-1547.

Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.

Official URL:


The influence of the growth parameters on the photoluminescence (PL) spectra has been investigated for samples with columnar morphology, either with InN columns on original substrates or as free-standing nanowires. Valuable information about band gap and electron concentration was obtained by line shape analysis. Optical band gaps between 730 and 750 meV and electron concentrations of 8 x 10(17) to 6 x 10(18) cm(-3) were derived from the fit of the PL spectra of different samples. The crystalline quality of the wires was investigated by high-resolution transmission electron microscopy.

Item Type:Article
Subjects:Physical Science > Nanoelectronics
Material Science > Nanostructured materials
ID Code:3816
Deposited By:SPI
Deposited On:22 Jan 2009 10:12
Last Modified:22 Jan 2009 10:12

Repository Staff Only: item control page