Nano Archive

Tuning from thermionic emission to ohmic tunnel contacts via doping in Schottky-barrier nanotube transistors

Chen, Yung-Fu and Fuhrer, Michael S. (2006) Tuning from thermionic emission to ohmic tunnel contacts via doping in Schottky-barrier nanotube transistors. NANO LETTERS, 6 (9). pp. 2158-2162.

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Official URL: http://dx.doi.org/10.1021/nl061379b

Abstract

Electrical power > 1 mW is dissipated in semiconducting single-walled carbon nanotube devices in a vacuum. After high-power treatment, devices exhibit lower on currents and intrinsic, ambipolar behavior with near-ideal thermionic emission from Schottky barriers of height one-half the band gap. Upon exposure to air, devices recover p-type behavior, with positive threshold and ohmic contacts. The air-exposed state cannot be explained by a change in contact work function but instead is due to doping of the nanotube.

Item Type:Article
Subjects:Physical Science > Nano objects
Physical Science > Nanoelectronics
ID Code:3813
Deposited By:SPI
Deposited On:22 Jan 2009 10:23
Last Modified:22 Jan 2009 10:23

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