Chen, Yung-Fu and Fuhrer, Michael S. (2006) Tuning from thermionic emission to ohmic tunnel contacts via doping in Schottky-barrier nanotube transistors. NANO LETTERS, 6 (9). pp. 2158-2162.
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http://dx.doi.org/10.1021/nl061379b
Abstract
Electrical power > 1 mW is dissipated in semiconducting single-walled carbon nanotube devices in a vacuum. After high-power treatment, devices exhibit lower on currents and intrinsic, ambipolar behavior with near-ideal thermionic emission from Schottky barriers of height one-half the band gap. Upon exposure to air, devices recover p-type behavior, with positive threshold and ohmic contacts. The air-exposed state cannot be explained by a change in contact work function but instead is due to doping of the nanotube.
| Item Type: | Article |
|---|---|
| Subjects: | Physical Science > Nano objects Physical Science > Nanoelectronics |
| ID Code: | 3813 |
| Deposited By: | SPI |
| Deposited On: | 22 Jan 2009 10:23 |
| Last Modified: | 22 Jan 2009 10:23 |
Repository Staff Only: item control page
