Nano Archive

Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor

Lind, Erik and Persson, Ann I. and Samuelson, Lars and Wernersson, Lars-Erik (2006) Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor. NANO LETTERS, 6 (9). pp. 1842-1846.

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Official URL: http://dx.doi.org/10.1021/nl052468b

Abstract

An n-type InAs/InAsP heterostructure nanowire field-effect transistor has been fabricated and compared with a homogeneous InAs field-effect transistor. For the same device geometry, by introduction of the heterostructure, the threshold voltage is shifted 4 V, the maximum current on-off ratio is enhanced by a factor of 10 000, and the subthreshold swing is lowered by a factor 4 compared to the homogeneous transistor. At the same time, the drive current remains constant for a fixed gate overdrive. A single nanowire heterostructure transistor has a transconductance of 5 mu A/V at a low source-drain voltage of 0.3 V. For the homogeneous InAs transistor, we deduced a high electron mobility of 1500 cm(2)/Vs.

Item Type:Article
Subjects:Physical Science > Nano objects
Physical Science > Nanoelectronics
ID Code:3811
Deposited By:SPI
Deposited On:22 Jan 2009 10:31
Last Modified:22 Jan 2009 10:31

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