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Synthesis and properties of single-crystal FeSi nanowires

Schmitt, Andrew L. and Bierman, Matthew J. and Schmeisser, Dieter and Himpsel, F. J. and Jin, Song (2006) Synthesis and properties of single-crystal FeSi nanowires. NANO LETTERS, 6 (8). pp. 1617-1621.

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Official URL: http://dx.doi.org/10.1021/nl060550g

Abstract

We report for the first time the chemical synthesis of free-standing single-crystal nanowires (NWs) of FeSi, the only transition-metal Kondo insulator and the host structure for ferromagnetic semiconductor FexCo1-xSi. Straight and smooth FeSi nanowires are produced on silicon substrates covered with a thin layer of silicon oxide through the decomposition of the single-source organometallic precursor trans-Fe(SiCl3)(2)(CO)(4) in a simple chemical vapor deposition process. Unlike typical vapor-liquid-solid (VLS) NW growth, FeSi NWs form without the addition of metal catalysts, have no catalyst tips, and depend strongly on the surface employed. X-ray spectroscopy verifies the identity and the room-temperature metallic nature of FeSi NWs. Room- temperature electrical transport measurements using NW devices show an average resistivity of 210 mu Omega cm, similar to the value for bulk FeSi. Investigations into the low-temperature physical properties of the first one-dimensional Kondo insulator and the possible new NW growth mechanism are underway. This unique synthetic approach to FeSi NWs will be generally applicable to many other transition-metal silicides.

Item Type:Article
Subjects:Material Science > Nanofabrication processes and tools
Material Science > Nanochemistry
ID Code:3790
Deposited By:SPI
Deposited On:22 Jan 2009 11:35
Last Modified:22 Jan 2009 11:35

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