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Three-dimensional nanoscale composition mapping of semiconductor nanowires

Perea, DE and Allen, Jonathan E. and May, SJ and Wessels, BW and Seidman, DN and Lauhon, LJ (2006) Three-dimensional nanoscale composition mapping of semiconductor nanowires. NANO LETTERS, 6 (2). pp. 181-185.

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We demonstrate the three-dimensional composition mapping of a semiconductor nanowire with single-atom sensitivity and subnanometer spatial resolution using atom probe tomography. A new class of atom probe, the local electrode atom probe (LEAP) microscope, was used to map the position of single Au atoms in an InAs nanowire and to image the interface between a Au catalyst and InAs in three dimensions with 0.3-nm resolution. These results establish atom probe tomography as a uniquely powerful tool for analyzing the chemical composition of semiconductor nanostructures.

Item Type:Article
Subjects:Material Science > Nanofabrication processes and tools
Physical Science > Nanoelectronics
ID Code:3781
Deposited By:SPI
Deposited On:22 Jan 2009 11:59
Last Modified:10 Feb 2009 14:31

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