van Kan, J. A. and Bettiol, A. A. and Watt, F (2006) Proton beam writing of three-dimensional nanostructures in hydrogen silsesquioxane. NANO LETTERS, 6 (3). pp. 579-582.
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Official URL: http://pubs.acs.org/doi/abs/10.1021/nl052478c
Proton beam writing (p-beam writing) is a promising new direct-write lithographic technique for three-dimensional nanofabrication. In p-beam writing a megaelectronvolt proton beam is focused to a sub-100-nm spot size and scanned over a suitable resist material. Unlike electrons, when a proton beam interacts with resist it follows an almost straight path resulting in high aspect ratio structures with vertical, smooth sidewalls. The secondary electrons induced by the primary proton beam have low energy and therefore limited range, resulting in minimal proximity effects. Hydrogen silsesquioxane has been identified as a superior resist for p-beam writing, allowing the production of high-aspect-ratio structures down to 22 nm.
|Subjects:||Technology > Manufacturing processes for nanotechnology|
Analytical Science > Beam methods
|Deposited By:||Farnush Anwar|
|Deposited On:||22 Jan 2009 13:20|
|Last Modified:||12 Feb 2009 17:29|
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