Nano Archive

TaSi2 nanowires: A potential field emitter and interconnect

Chueh, Yu-Lun and Ko, Mong-Tzong and Chou, Li-Jen and Chen, Lih-Juann and Wu, Cen-Shawn and Chen, Chii-Dong (2006) TaSi2 nanowires: A potential field emitter and interconnect. NANO LETTERS, 6 (8). pp. 1637-1644.

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TaSi2 nanowires have been synthesized on a Si substrate by annealing NiSi2 films at 950 degrees C in an ambient containing Ta vapor. The nanowires could be grown up to 13 mu m in length. Field-emission measurements show that the turn-on field is low at 4-4.5 V/mu m and the threshold field is down to 6 V/mu m with the field enhancement factor as high as 1800. The metallic TaSi2 nanowires exhibit excellent electrical properties with a remarkable high failure current density of 3 x 10(8) A cm(-2). In addition, effects of annealing temperatures and capability of metal silicide mediation layer on the growth of nanowires are addressed. This simple approach promises future applications in nanoelectronics and nano-optoelectronics.

Item Type:Article
Subjects:Material Science > Nanofabrication processes and tools
Material Science > Nanostructured materials
Engineering > Nanotechnology applications in ICT
ID Code:3704
Deposited By:Farnush Anwar
Deposited On:22 Jan 2009 13:39
Last Modified:22 Jan 2009 13:39

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