Wang, D. W. and Sheriff, B. A. and Heath, James R. (2006) Silicon p-FETs from ultrahigh density nanowire arrays. NANO LETTERS, 6 (6). pp. 1096-1100.
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Official URL: http://pubs.acs.org/doi/abs/10.1021/nl052558g
Statistical numbers of field-effect transistors (FETs) were fabricated from a circuit of 17-nm-wide, 34-nm-pitch Si nanowires boron doped at a level of 10(18) cm(-3). Top-gated 4-mu m-wide Si nanowire p-FETs yielded low off-currents (similar to 10(-12) A), high on/off ratios (10(5)-10(6)), good on current values (30 mu A/mu m), high mobilities (similar to 100 cm(2)/V-s), and low subthreshold swing values (similar to 80 mV/decade between 10(-12) and 10(-10) A increasing to 200 mV/decade between 10(-10)-10(-8) A).
|Subjects:||Physical Science > Nano objects|
Physical Science > Nanoelectronics
Engineering > Nanotechnology applications in ICT
|Deposited By:||Farnush Anwar|
|Deposited On:||22 Jan 2009 13:42|
|Last Modified:||31 Mar 2009 15:57|
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