Nano Archive

The controlled growth of GaN nanowires

Hersee, Stephen D. and Sun, Xinyu and Wang, Xin (2006) The controlled growth of GaN nanowires. NANO LETTERS, 6 (8). pp. 1808-1811.

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Official URL: http://pubs.acs.org/doi/abs/10.1021/nl060553t

Abstract

This paper reports a scalable process for the growth of high-quality GaN nanowires and uniform nanowire arrays in which the position and diameter of each nanowire is precisely controlled. The approach is based on conventional metalorganic chemical vapor deposition using regular precursors and requires no additional metal catalyst. The location, orientation, and diameter of each GaN nanowire are controlled using a thin, selective growth mask that is patterned by interferometric lithography. It was found that use of a pulsed MOCVD process allowed the nanowire diameter to remain constant after the nanowires had emerged from the selective growth mask. Vertical GaN nanowire growth rates in excess of 2 mu m/h were measured, while remarkably the diameter of each nanowire remained constant over the entire (micrometer) length of the nanowires. The paper reports transmission electron microscopy and photoluminescence data.

Item Type:Article
Subjects:Analytical Science > Microscopy and probe methods
Material Science > Nanofabrication processes and tools
Physical Science > Nano objects
ID Code:3696
Deposited By:Farnush Anwar
Deposited On:22 Jan 2009 13:48
Last Modified:22 Jan 2009 13:48

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