Hersee, Stephen D. and Sun, Xinyu and Wang, Xin (2006) The controlled growth of GaN nanowires. NANO LETTERS, 6 (8). pp. 1808-1811.
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http://pubs.acs.org/doi/abs/10.1021/nl060553t
This paper reports a scalable process for the growth of high-quality GaN nanowires and uniform nanowire arrays in which the position and diameter of each nanowire is precisely controlled. The approach is based on conventional metalorganic chemical vapor deposition using regular precursors and requires no additional metal catalyst. The location, orientation, and diameter of each GaN nanowire are controlled using a thin, selective growth mask that is patterned by interferometric lithography. It was found that use of a pulsed MOCVD process allowed the nanowire diameter to remain constant after the nanowires had emerged from the selective growth mask. Vertical GaN nanowire growth rates in excess of 2 mu m/h were measured, while remarkably the diameter of each nanowire remained constant over the entire (micrometer) length of the nanowires. The paper reports transmission electron microscopy and photoluminescence data.
|Subjects:||Analytical Science > Microscopy and probe methods|
Material Science > Nanofabrication processes and tools
Physical Science > Nano objects
|Deposited By:||Farnush Anwar|
|Deposited On:||22 Jan 2009 13:48|
|Last Modified:||22 Jan 2009 13:48|
Repository Staff Only: item control page