Kam, Kinson C. and Deepak, F. Leonard and Gundiah, Gautam and Rao, C. N. R. and Cheetham, A. K. (2004) Properties of nanostructured GaN prepared by different methods. Solid State Sciences, 6 (10). pp. 1107-1112.
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Various methods have been employed to prepare nanostructured GaN exhibiting reasonable surface areas. The methods include ammonolysis of γ-Ga2O3 or Ga2O3 prepared in the presence of a surfactant, and the reaction of a mixture of Ga2O3 and Ga(acac)3 with NH3. The latter reaction was also carried out in the presence of H3BO3. All the methods yield good GaN samples as characterized by X-ray diffraction, electron microscopy and photoluminescence measurements. Relatively high surface areas were obtained with the GaN samples prepared by the ammonolysis of γ-Ga2O3 (53 m2 g−1), and of Ga2O3 prepared in the presence of a surfactant (66 m2 g−1). GaN obtained by the reaction of NH3 with a mixture of Ga2O3, Ga(acac)3 and boric acid gave a surface area of 59 m2 g−1. GaN nanoparticles prepared by the nitridation of mesoporous Ga2O3 samples generally retain some porosity.
|Subjects:||Material Science > Nanochemistry|
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Physics|
Faculty of Engineering, Science and Mathematics > School of Chemistry
|Deposited On:||28 Jan 2009 06:49|
|Last Modified:||02 Mar 2009 09:54|
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