Nano Archive

Properties of nanostructured GaN prepared by different methods

Kam, Kinson C. and Deepak, F. Leonard and Gundiah, Gautam and Rao, C. N. R. and Cheetham, A. K. (2004) Properties of nanostructured GaN prepared by different methods. Solid State Sciences, 6 (10). pp. 1107-1112.

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Abstract

Various methods have been employed to prepare nanostructured GaN exhibiting reasonable surface areas. The methods include ammonolysis of γ-Ga2O3 or Ga2O3 prepared in the presence of a surfactant, and the reaction of a mixture of Ga2O3 and Ga(acac)3 with NH3. The latter reaction was also carried out in the presence of H3BO3. All the methods yield good GaN samples as characterized by X-ray diffraction, electron microscopy and photoluminescence measurements. Relatively high surface areas were obtained with the GaN samples prepared by the ammonolysis of γ-Ga2O3 (53 m2 g−1), and of Ga2O3 prepared in the presence of a surfactant (66 m2 g−1). GaN obtained by the reaction of NH3 with a mixture of Ga2O3, Ga(acac)3 and boric acid gave a surface area of 59 m2 g−1. GaN nanoparticles prepared by the nitridation of mesoporous Ga2O3 samples generally retain some porosity.

Item Type:Article
Subjects:Material Science > Nanochemistry
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:3677
Deposited By:JNCASR
Deposited On:28 Jan 2009 06:49
Last Modified:02 Mar 2009 09:54

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