Raina, G. and Kulkarni, G. U. and Rao, C. N. R. (2004) Formation of B, Al, Ga, and Si nitrides from their oxides: a reactive laser ablation study. Materials Research Bulletin, 39 (9). pp. 1271-1277. ISSN 0025-5408
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Nitrides such as Si3N4 and GaN are made by the reaction of the respective oxide with N-2 or NH3. In order to understand the mechanism of formation of nitrides, reactive laser ablation of B2O3, Al2O3, Ga2O3, and SiO2 in pure form, as well as in mixture with carbon, has been carried out in an atmosphere of nitrogen or ammonia in a pulsed supersonic jet. The reaction of N-2 with SiO2 gives nitridic species such as Si2Ny (y less than or equal to 5) in the vapor phase. On reaction with N-2 in the presence of carbon, B2O3 and Ga2O3 Yield species of the type BxNy and GaNy, respectively. Nitridic species are preponderant in the reaction with ammonia only in the case of SiO2. Al2O3 predominantly gives oxynitridic species under the reaction conditions examined.
|Subjects:||Material Science > Nanochemistry|
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Physics|
Faculty of Engineering, Science and Mathematics > School of Chemistry
|Deposited On:||28 Jan 2009 06:51|
|Last Modified:||28 Jan 2009 06:51|
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