Nano Archive

Synthesis of Indium Nanowires by Galvanic Displacement and Their Optical Properties

Li, Haohua and Liang, Chaolun and Liu, Meng and Zhong, Kuan and Tong, Yexiang and Liu, Peng and Hope, Greg A. (2009) Synthesis of Indium Nanowires by Galvanic Displacement and Their Optical Properties. Nanoscale Research Letters, 4 (1). pp. 47-53. ISSN 1931-7573 (Print) 1556-276X (Online)

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Single crystalline indium nanowires were prepared on Zn substrate which had been treated in concentrated sulphuric acid by galvanic displacement in the 0.002 mol L−1 In2(SO4)3-0.002 mol L−1 SeO2-0.02 mol L−1 SDS-0.01 mol L−1 citric acid aqueous solution. The typical diameter of indium nanowires is 30 nm and most of the nanowires are over 30 μm in length. XRD, HRTEM, SAED and structural simulation clearly demonstrate that indium nanowires are single-crystalline with the tetragonal structure, the growth direction of the nanowires is along [100] facet. The UV-Vis absorption spectra showed that indium nanowires display typical transverse resonance of SPR properties. The surfactant (SDS) and the pretreatment of Zn substrate play an important role in the growth process. The mechanism of indium nanowires growth is the synergic effect of treated Zn substrate (hard template) and SDS (soft template).

Item Type:Article
Uncontrolled Keywords:Indium - Nanowire - Galvanic displacement - Surface plasmon resonance - Soft template
Subjects:Physical Science > Nanoelectronics
ID Code:3658
Deposited By:Lesley Tobin
Deposited On:19 Jan 2009 13:17
Last Modified:19 Jan 2009 13:18

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