Poswal, H. K. and Garg, Nandini and Sharma, Surinder M. and Busetto, E and Sikka, S. K. and Gundiah, Gautam and Deepak, F. Leonard and Rao, C. N. R. (2005) Pressure-Induced Structural Phase Transformations in Silicon Nanowires. Journal of NANOSCIENCE and NANOTECHNOLOGY, 5 (5). pp. 729-732.
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High-pressure structural behavior of silicon nanowires is investigated up to ∼22 GPa using angle dispersive X-ray diffraction measurements. Silicon nanowires transform from the cubic to the β-tin phase at 7.5–10.5 GPa, to the Imma phase at ∼14 GPa, and to the primitive hexagonal structure at ∼16.2 GPa. On complete release of pressure, it transforms to the metastable R8 phase. The observed sequence of phase transitions is the same as that of bulk silicon. Though the X-ray diffraction experiments do not reveal any size effect, the pressure dependence of Raman modes shows that the behavior of nanowires is in between that of the bulk crystal and porous Si.
|Subjects:||Material Science > Nanochemistry|
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Physics|
Faculty of Engineering, Science and Mathematics > School of Chemistry
|Deposited On:||19 Jan 2009 09:16|
|Last Modified:||02 Mar 2009 09:46|
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