Gautam, Ujjal K. and Vivekchand, S. R. C. and Govindaraj , Achutharao and Rao, C. N. R. (2005) GaS and GaSe nanowalls and their transformation to Ga2O3 and GaN nanowalls. Chemical Communications (31). pp. 3995-3997.
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Two-dimensional nanowalls of GaS and GaSe are obtained by thermal exfoliation around 900 °C, and transformed to Ga2O3 and GaN nanowalls upon reaction with air and ammonia respectively at 800 °C, while maintaining dimensional integrity.
|Subjects:||Material Science > Nanochemistry|
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Physics|
Faculty of Engineering, Science and Mathematics > School of Chemistry
|Deposited On:||19 Jan 2009 09:27|
|Last Modified:||06 Apr 2009 14:53|
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