Nano Archive

GaS and GaSe nanowalls and their transformation to Ga2O3 and GaN nanowalls

Gautam, Ujjal K. and Vivekchand, S. R. C. and Govindaraj , Achutharao and Rao, C. N. R. (2005) GaS and GaSe nanowalls and their transformation to Ga2O3 and GaN nanowalls. Chemical Communications (31). pp. 3995-3997.

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Abstract

Two-dimensional nanowalls of GaS and GaSe are obtained by thermal exfoliation around 900 °C, and transformed to Ga2O3 and GaN nanowalls upon reaction with air and ammonia respectively at 800 °C, while maintaining dimensional integrity.

Item Type:Article
Subjects:Material Science > Nanochemistry
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:3624
Deposited By:JNCASR
Deposited On:19 Jan 2009 09:27
Last Modified:06 Apr 2009 14:53

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