Sardar, Kripasindhu and Dan, Meenakshi and Schwenzer, Birgit and Rao, C. N. R. (2005) A simple single-source precursor route to the nanostructures of AlN, GaN and InN. Journal of Materials Chemistry, 15 . pp. 2175-2177.
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In an effort to find a simple and common single-source precursor route for the group 13 metal nitride semiconductor nanostructures, the complexes formed by the trichlorides of Al, Ga and In with urea have been investigated. The complexes, characterized by X-ray crystallography and other techniques, yield the nitrides on thermal decomposition. Single crystalline nanowires of AlN, GaN and InN have been deposited on Si substrates covered with Au islands by using the complexes as precursors. The urea complexes yield single crystalline nanocrystals under solvothermal conditions. The successful synthesis of the nanowires and nanocrystals of these three important nitrides by a simple single-precursor route is noteworthy and the method may indeed be useful in practice.
|Subjects:||Material Science > Nanochemistry|
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Physics|
Faculty of Engineering, Science and Mathematics > School of Chemistry
|Deposited On:||20 Jan 2009 09:36|
|Last Modified:||20 Jan 2009 09:36|
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