Djurisic, A. B. and Leung, Y. H. and Tam, K. H. and Hsu, Y. F. and Ding, L and Ge, W. K. and Zhong, Y. C. and Wong, K. S. and Chan, W. K. and Tam, H. L. and Cheah, K. W. and Kwok, W. M. and Phillips, D. L. (2007) Defect emissions in ZnO nanostructures. Nanotechnology, 18 (9). 095702 (8pp).
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http://stacks.iop.org/0957-4484/18/095702
Defects in three different types of ZnO nanostructures before and after annealing under different conditions were studied. The annealing atmosphere and temperature were found to strongly affect the yellow and orange-red defect emissions, while green emission was not significantly affected by annealing. The defect emissions exhibited a strong dependence on the temperature and excitation wavelength, with some defect emissions observable only at low temperatures and for certain excitation wavelengths. The yellow emission in samples prepared by a hydrothermal method is likely due to the presence of OH groups, instead of the commonly assumed interstitial oxygen defect. The green and orange-red emissions are likely due to donor acceptor transitions involving defect complexes, which likely include zinc vacancy complexes in the case of orange-red emissions.
|Subjects:||Material Science > Nanostructured materials|
|Deposited By:||Lesley Tobin|
|Deposited On:||28 Nov 2008 16:40|
|Last Modified:||19 Feb 2009 09:08|
Repository Staff Only: item control page