Nano Archive

Field emission properties of boron and nitrogen doped carbon nanotubes

Sharma, R. B. and Late, D. J. and Joag, D. S. and Govindaraj, A and Rao, C. N. R (2006) Field emission properties of boron and nitrogen doped carbon nanotubes. CHEMICAL PHYSICS LETTERS, 428 (1-3). pp. 102-108.

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Abstract

Field electron emission (FE) properties of boron and nitrogen doped carbon nanotubes (CNTs) grown in situ on tungsten (W) tips and silicon substrates have been studied. For a total emission current of 1 μA, the current density (J) was 4 A/cm2 at 368 V/μm for B-doped CNTs and at 320 V/μm for N-doped CNTs grown on W tips, compared with the value of 1.5 A/cm2 at 290 V/μm for undoped CNTs. FE currents upto 400 μA drawn from both B- and N-doped CNTs are stable for more than 3 h.

Item Type:Article
Subjects:Physical Science > Nanophysics
Material Science > Nanochemistry
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:3447
Deposited By:JNCASR
Deposited On:20 Jan 2009 10:02
Last Modified:12 Feb 2009 11:32

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