Sharma, R. B. and Late, D. J. and Joag, D. S. and Govindaraj, A and Rao, C. N. R (2006) Field emission properties of boron and nitrogen doped carbon nanotubes. CHEMICAL PHYSICS LETTERS, 428 (1-3). pp. 102-108.
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Abstract
Field electron emission (FE) properties of boron and nitrogen doped carbon nanotubes (CNTs) grown in situ on tungsten (W) tips and silicon substrates have been studied. For a total emission current of 1 μA, the current density (J) was 4 A/cm2 at 368 V/μm for B-doped CNTs and at 320 V/μm for N-doped CNTs grown on W tips, compared with the value of 1.5 A/cm2 at 290 V/μm for undoped CNTs. FE currents upto 400 μA drawn from both B- and N-doped CNTs are stable for more than 3 h.
| Item Type: | Article |
|---|---|
| Subjects: | Physical Science > Nanophysics Material Science > Nanochemistry |
| Divisions: | Faculty of Engineering, Science and Mathematics > School of Physics Faculty of Engineering, Science and Mathematics > School of Chemistry |
| ID Code: | 3447 |
| Deposited By: | JNCASR |
| Deposited On: | 20 Jan 2009 10:02 |
| Last Modified: | 12 Feb 2009 11:32 |
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