Nano Archive

Doping in Carbon Nanotubes Probed by Raman and Transport Measurements

Das, Anindya and Sood, A. K. and Govindaraj , Achutharao and Saitta, A. Marco and Lazzeri, Michele and Mauri, Francesco and Rao, C. N. R. (2007) Doping in Carbon Nanotubes Probed by Raman and Transport Measurements. PHYSICAL REVIEW LETTERS, 99 (13). p. 136803.

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Official URL: http://link.aps.org/doi/10.1103/PhysRevLett.99.136...

Abstract

In situ Raman experiments together with transport measurements have been carried out on carbon nanotubes as a function of gate voltage. In metallic tubes, a large increase in the Raman frequency of the G- band, accompanied by a substantial decrease of its linewidth, is observed with electron or hole doping. In addition, we see an increase in the Raman frequency of the G+ band in semiconducting tubes. These results are quantitatively explained using ab initio calculations that take into account effects beyond the adiabatic approximation. Our results imply that Raman spectroscopy can be used as an accurate measure of the doping of both metallic and semiconducting nanotu

Item Type:Article
Subjects:Physical Science > Nanophysics
Material Science > Nanochemistry
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:3428
Deposited By:JNCASR
Deposited On:20 Jan 2009 10:51
Last Modified:06 Apr 2009 14:00

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