Das, Anindya and Sood, A. K. and Govindaraj , Achutharao and Saitta, A. Marco and Lazzeri, Michele and Mauri, Francesco and Rao, C. N. R. (2007) Doping in Carbon Nanotubes Probed by Raman and Transport Measurements. PHYSICAL REVIEW LETTERS, 99 (13). p. 136803.
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Official URL: http://link.aps.org/doi/10.1103/PhysRevLett.99.136...
Abstract
In situ Raman experiments together with transport measurements have been carried out on carbon nanotubes as a function of gate voltage. In metallic tubes, a large increase in the Raman frequency of the G- band, accompanied by a substantial decrease of its linewidth, is observed with electron or hole doping. In addition, we see an increase in the Raman frequency of the G+ band in semiconducting tubes. These results are quantitatively explained using ab initio calculations that take into account effects beyond the adiabatic approximation. Our results imply that Raman spectroscopy can be used as an accurate measure of the doping of both metallic and semiconducting nanotu
| Item Type: | Article |
|---|---|
| Subjects: | Physical Science > Nanophysics Material Science > Nanochemistry |
| Divisions: | Faculty of Engineering, Science and Mathematics > School of Physics Faculty of Engineering, Science and Mathematics > School of Chemistry |
| ID Code: | 3428 |
| Deposited By: | JNCASR |
| Deposited On: | 20 Jan 2009 10:51 |
| Last Modified: | 06 Apr 2009 14:00 |
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