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Synthesis and optical properties of In-doped GaN nanocrystals

Bhat, S. Venkataprasad and Biswas, Kanishka and Rao, C. N. R. (2007) Synthesis and optical properties of In-doped GaN nanocrystals. solid state communications, 141 (6). pp. 325-328.

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Abstract

Indium-doped GaN nanocrystals with 5% and 10% In have been prepared by a low temperature solvothermal method using hexamethyldisilazane as the nitriding reagent. The nanocrystals show Raman bands at lower frequencies compared to GaN. Photoluminescence spectra of the In-doped GaN nanocrystals exhibit an increase in the FWHM with the decrease in the PL band energy, the band energy itself decreasing with increase in the In content.

Item Type:Article
Subjects:Material Science > Nanochemistry
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:3417
Deposited By:JNCASR
Deposited On:20 Jan 2009 11:02
Last Modified:10 Feb 2009 16:25

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