Bhat, S. Venkataprasad and Biswas, Kanishka and Rao, C. N. R. (2007) Synthesis and optical properties of In-doped GaN nanocrystals. solid state communications, 141 (6). pp. 325-328.
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Indium-doped GaN nanocrystals with 5% and 10% In have been prepared by a low temperature solvothermal method using hexamethyldisilazane as the nitriding reagent. The nanocrystals show Raman bands at lower frequencies compared to GaN. Photoluminescence spectra of the In-doped GaN nanocrystals exhibit an increase in the FWHM with the decrease in the PL band energy, the band energy itself decreasing with increase in the In content.
|Subjects:||Material Science > Nanochemistry|
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Physics|
Faculty of Engineering, Science and Mathematics > School of Chemistry
|Deposited On:||20 Jan 2009 11:02|
|Last Modified:||10 Feb 2009 16:25|
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