Bhat, S. Venkataprasad and Biswas, Kanishka and Rao, C. N. R. (2007) Synthesis and optical properties of In-doped GaN nanocrystals. solid state communications, 141 (6). pp. 325-328.
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Abstract
Indium-doped GaN nanocrystals with 5% and 10% In have been prepared by a low temperature solvothermal method using hexamethyldisilazane as the nitriding reagent. The nanocrystals show Raman bands at lower frequencies compared to GaN. Photoluminescence spectra of the In-doped GaN nanocrystals exhibit an increase in the FWHM with the decrease in the PL band energy, the band energy itself decreasing with increase in the In content.
| Item Type: | Article |
|---|---|
| Subjects: | Material Science > Nanochemistry |
| Divisions: | Faculty of Engineering, Science and Mathematics > School of Physics Faculty of Engineering, Science and Mathematics > School of Chemistry |
| ID Code: | 3417 |
| Deposited By: | JNCASR |
| Deposited On: | 20 Jan 2009 11:02 |
| Last Modified: | 10 Feb 2009 16:25 |
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