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Linear Rashba Model of a Hydrogenic Donor Impurity in GaAs/GaAlAs Quantum Wells

Li, Shu-Shen and Xia, Jian-Bai (2009) Linear Rashba Model of a Hydrogenic Donor Impurity in GaAs/GaAlAs Quantum Wells. Nanoscale Research Letters, 4 (2). pp. 178-180. ISSN 1931-7573 (Print) 1556-276X (Online)

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Official URL: http://www.springerlink.com/content/16245542552028...

Abstract

The Rashba spin-orbit splitting of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells is investigated theoretically in the framework of effective-mass envelope function theory. The Rashba effect near the interface between GaAs and GaAlAs is assumed to be a linear relation with the distance from the quantum well side. We find that the splitting energy of the excited state is larger and less dependent on the position of the impurity than that of the ground state. Our results are useful for the application of Rashba spin-orbit coupling to photoelectric devices.

Item Type:Article
Subjects:Physical Science > Quantum phenomena
ID Code:3397
Deposited By:Lesley Tobin
Deposited On:16 Jan 2009 13:58
Last Modified:16 Jan 2009 13:58

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