Nano Archive

Surface fluxes of Si and C adatoms at initial growth stages of SiC quantum dots

Rider, A. E. and Levchenko, I. and Ostrikov, K. (2007) Surface fluxes of Si and C adatoms at initial growth stages of SiC quantum dots. JOURNAL OF APPLIED PHYSICS, 101 (4).

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Official URL: http://link.aip.org/link/?JAPIAU/101/044306/1

Abstract

Self-assembly of highly stoichiometric SiC quantum dots still remains a major challenge for the gas/plasma-based nanodot synthesis. By means of a multiscale hybrid numerical simulation of the initial stage (0.1-2.5 s into the process) of deposition of SiC/Si(100)quantum dot nuclei, it is shown that equal Si and k(st) atom deposition fluxes result in strong nonstoichiometric nanodot composition due to very different surface fluxes of Si and C adatoms to the quantum dots. At this stage, the surface fluxes of Si and C adatoms to SiC nanodots can be effectively controlled by manipulating the Si/C atom influx ratio and the Si(100)surface temperature. It is demonstrated that at a surface temperature of 800 K the surface fluxes can be equalized after only 0.05 s into the process; however, it takes more then 1 s at a surface temperature of 600 K. Based on the results of this study, effective strategies to maintain a stoichiometric ([Si]/[C]=1:1) elemental ratio during the initial stages of deposition of SiC/Si(100) quantum dot nuclei in a neutral/ionized gas-based process are proposed.(c) 2007 American Institute of Physics.

Item Type:Article
Subjects:Physical Science > Nano objects
Material Science > Nanochemistry
ID Code:3225
Deposited By:Anuj Seth
Deposited On:14 Jan 2009 14:19
Last Modified:20 Jan 2009 15:58

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