Chen, X and Palmer, R. E. and Robinson, A. P. G. (2008) A high resolution water soluble fullerene molecular resist for electron beam lithography. NANOTECHNOLOGY, 19 (27).
|PDF - Published Version|
Official URL: http://dx.doi.org/10.1088/0957-4484/19/27/275308
Traditionally, many lithography resists have used hazardous, environmentally damaging or flammable chemicals as casting solvent and developer. There is now a strong drive towards processes that are safer and more environmentally friendly. We report nanometre-scale patterning of a fullerene molecular resist film with electron beam lithography, using water as casting solvent and developer. Negative tone behaviour is demonstrated after exposure and development. The sensitivity of this resist to 20 keV electrons is 1.5 x 10(-2) C cm(-2). Arrays of lines with a width of 30-35 nm and pitches of 200 and 400 nm, and arrays of dots with a diameter of 40 nm and a pitch of 200 nm have been patterned at 30 keV. The etch durability of this resist was found to be similar to 2 times that of a standard novolac based resist. Initial results of the chemical amplification of this material for enhanced sensitivity are also presented.
|Subjects:||Physical Science > Nano objects|
Technology > Manufacturing processes for nanotechnology
Analytical Science > Beam methods
|Deposited By:||Farnush Anwar|
|Deposited On:||12 Jan 2009 16:11|
|Last Modified:||19 Feb 2009 09:53|
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