Nano Archive

Conductance and polarisability of C-60 films

Popok, V. N. and Jonsson, M. and Campbell, E. E. B. (2007) Conductance and polarisability of C-60 films. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 7 (4-5). pp. 1434-1438.

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Official URL: http://www.ingentaconnect.com/content/asp/jnn/2007...

Abstract

Thin films of C-60 deposited in vacuum are studied using current-voltage (I-V) measurements and atomic force microscopy (AFM). In situ electrical measurements give an average resistivity of ca. 30 M Omega cm for the as-deposited films at room temperature. The I-V dependences are found to correspond to ohmic behaviour but they have a hysteresis shape attributed to remnant polarisation due to the domain structure of the films. AFM images show a grainy surface morphology for the deposited C-60. Temperature dependent measurements in the range 290-365 K provide evidence for a variable range hopping mechanism of conductance with an activation energy of 0.8-1.0 ev. With further temperature increase the C-60 films restructure leading to an increase in grain size and a change of the electrical properties with I-V dependences showing Schottky barrier formation. The effect of oxygen on the conductance of the C-60 films under their exposure to an ambient atmosphere is considered and discussed.

Item Type:Article
Uncontrolled Keywords:fullerene; conductance; polarisation; hysteresis; atomic force microscopy
Subjects:Material Science > Functional and hybrid materials
Physical Science > Nanoelectronics
ID Code:2843
Deposited By:Farnush Anwar
Deposited On:13 Jan 2009 14:17
Last Modified:26 Jan 2009 16:56

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