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Diameter-dependent electromechanical properties of GaN nanowires

Nam, Chang-Yong and Jaroenapibal, Papot and Tham, Douglas and Luzzi, David E. and Evoy, Stephane and Fischer, John E. (2006) Diameter-dependent electromechanical properties of GaN nanowires. NANO LETTERS, 6 (2). pp. 153-158.

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Official URL: http://pubs.acs.org/doi/abs/10.1021/nl051860m

Abstract

The diameter-dependent Young's modulus, E, and quality factor, Q, of GaN nanowires were measured using electromechanical resonance analysis in a transmission electron microscope. E is close to the theoretical bulk value (similar to 300 GPa) for a large diameter nanowire (d = 84 nm) but is significantly smaller for smaller diameters. At room temperature, Q is as high as 2800 for d = 84 nm, significantly greater than what is obtained from micromachined Si resonators of comparable surface-to-volume ratio. This implies significant advantages of smooth-surfaced GaN nanowire resonators for nanoelectromechanical system (NEMS) applications. Two closely spaced resonances are observed and attributed to the low-symmetry triangular cross section of the nanowires.

Item Type:Article
Subjects:Engineering > Nanotechnology applications in mechanical engineering
ID Code:2775
Deposited By:Lesley Tobin
Deposited On:08 Jan 2009 16:34
Last Modified:02 Mar 2009 10:40

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