Adhikari, Hemant and Marshall, A. F. and Chidsey, Christopher E. D. and McIntyre, P. C. (2006) Germanium nanowire epitaxy: Shape and orientation control. NANO LETTERS, 6 (2). pp. 318-323.
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Official URL: http://dx.doi.org/10.1021/nl052231f
Epitaxial growth of nanowires along the < 111 > directions was obtained on Ge(111), Ge(110), Ge(001), and heteroepitaxial Ge on Si(001) substrates at temperatures of 350 degrees C or less by gold-nanoparticle-catalyzed chemical vapor deposition. On Ge(111), the growth was mostly vertical. In addition to < 111 > growth, < 110 > growth was observed on Ge(001) and Ge(110) substrates. Tapering was avoided by the use of the two-temperature growth procedure, reported earlier by Greytak et al.
|Subjects:||Material Science > Nanochemistry|
|Deposited By:||Lesley Tobin|
|Deposited On:||08 Jan 2009 17:01|
|Last Modified:||19 Feb 2009 10:08|
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