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Efficient CdSe/CdS quantum dot light-emitting diodes using a thermally polymerized hole transport layer

Zhao, J. L. and Bardecker, J. A. and Munro, A. M. and Liu, M. S. and Niu, Y. H. and Ding, I. K. and Luo, J. D. and Chen, B. Q. and Jen, A. K. Y. and Ginger, D. S. (2006) Efficient CdSe/CdS quantum dot light-emitting diodes using a thermally polymerized hole transport layer. NANO LETTERS, 6 (3). pp. 463-467.

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Official URL: http://pubs.acs.org/doi/abs/10.1021/nl052417e

Abstract

We report multilayer nanocrystal quantum dot light-emitting diodes (OD-LEDs) fabricated by spin-coating a monolayer of colloidal CdSe/CdS nanocrystals on top of thermally polymerized solvent-resistant hole-transport layers (HTLs). We obtain high-quality QD layers of controlled thickness (down to submonolayer) simply by spin-coating OD solutions directly onto the HTL. The resulting OD-LEDs exhibit narrow (similar to 30 nm, fwhm) electroluminescence from the QDs with virtually no emission from the organic matrix at any voltage. Using multiple spin-on HTLs improves the external quantum efficiency of the QD-LEDs to similar to 0.8% at a brightness of 100 cd/m(2) (with a maximum brightness over 1000 cd/m(2)). We conclude that QD-LEDs could be made more efficient by further optimization of the organic semiconductors.

Item Type:Article
Subjects:Material Science > Nanofabrication processes and tools
Physical Science > Quantum phenomena
ID Code:2763
Deposited By:Lesley Tobin
Deposited On:14 Jan 2009 15:49
Last Modified:12 Feb 2009 14:37

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