Bao, Jiming and Zimmler, Mariano A. and Capasso, Federico and Wang, Xiaowei and Ren, Z. F. (2006) Broadband ZnO single-nanowire light-emitting diode. NANO LETTERS, 6 (8). pp. 1719-1722. ISSN 1530-6984
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http://pubs.acs.org/doi/abs/10.1021/nl061080t
Abstract
We present a novel technique for reliable electrical injection into single semiconductor nanowires for light-emitting diodes and lasers. The method makes use of a high-resolution negative electron-beam resist and direct electron-beam patterning for the precise fabrication of a metallic top contact along the length of the nanowire, while a planar substrate is used as a bottom contact. It can be applied to any nanowire structure with an arbitrary cross section. We demonstrate this technique by constructing the first zinc oxide single-nanowire light-emitting diode. The device exhibits broad sub-bandgap emission at room temperature.
| Item Type: | Article |
|---|---|
| Subjects: | Physical Science > Nanoelectronics |
| ID Code: | 2751 |
| Deposited By: | Lesley Tobin |
| Deposited On: | 20 Jan 2009 10:53 |
| Last Modified: | 20 Jan 2009 10:53 |
Repository Staff Only: item control page

