Wang, Xinran and Ouyang, Yijian and Li, Xiaolin and Wang, Hailiang and Guo, Jing and Dai, Hongjie (2008) Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors. PHYSICAL REVIEW LETTERS, 100 (20).
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Official URL: http://www.stanford.edu/dept/chemistry/faculty/dai...
Abstract
Sub-10 nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10 nm GNRs afforded semiconducting FETs without exception, with I-on/I-off ratio up to 10(6) and on-state current density as high as similar to 2000 mu A/mu m. We estimated carrier mobility similar to 200 cm(2)/V s and scattering mean free path similar to 10 nm in sub-10 nm GNRs. Scattering mechanisms by edges, acoustic phonon, and defects are discussed. The sub-10 nm GNRFETs are comparable to small diameter (d <=similar to 1.2 nm) carbon nanotube FETs with Pd contacts in on-state current density and I-on/I-off ratio, but have the advantage of producing all-semiconducting devices.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | carbon, carrier mean free path, carrier mobility, current density, elemental semiconductors, field effect transistors, nanostructured materials, phonons |
| Subjects: | Physical Science > Nanoelectronics |
| ID Code: | 275 |
| Deposited By: | Lesley Tobin |
| Deposited On: | 24 Nov 2008 15:53 |
| Last Modified: | 03 Feb 2009 12:08 |
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