Nano Archive

Controlled synthesis of single-crystalline InN nanorods

Kryliouk, Olga and Park, Hyun Jong and Won, Yong Sun and Anderson, Tim and Davydov, Albert and Levin, Igor and Kim, Ji Hyun and Freitas, Jaime A. (2007) Controlled synthesis of single-crystalline InN nanorods. NANOTECHNOLOGY, 18 (13). p. 135606.

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Single-crystalline InN nanorods were successfully grown on c-Al2O3, GaN, Si(111), and Si(100) substrates by non-catalytic, template-free hydride metal–organic vapour phase epitaxy (H-MOVPE). It was evaluated thermodynamically and confirmed experimentally that the domain of nanorod growth lies in the vicinity of the growth–etch transition. Stable gas phase oligomer formation is suggested as the nucleation mechanism for InN nanoparticle generation. Dislocation-free, high-quality InN nanorods with [00.1] growth axis were formed via an apparent solid–vapour growth mechanism. The nanorod diameter, density, and orientation were controlled by growth temperature, substrate selection, and HCl/TMIn and N/In inlet molar ratios.

Item Type:Article
Subjects:Material Science > Nanofabrication processes and tools
Physical Science > Nano objects
Material Science > Nanostructured materials
Material Science > Nanochemistry
ID Code:2663
Deposited By:Anuj Seth
Deposited On:27 May 2009 14:19
Last Modified:27 May 2009 14:19

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