Choi, Won Hoon and Kang, Pil Gyu and Ryang, Kyung Deuk and Yeom, Han Woong (2008) Band-structure engineering of gold atomic wires on silicon by controlled doping. PHYSICAL REVIEW LETTERS, 100 (12).
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Official URL: http://link.aps.org/doi/10.1103/PhysRevLett.100.12...
We report on the systematic tuning of the electronic band structure of atomic wires by controlling the density of impurity atoms. The atomic wires are self-assembled on Si(111) by substitutional gold adsorbates and extra silicon atoms are deposited as the impurity dopants. The one-dimensional electronic band of gold atomic wires, measured by angle-resolved photoemission, changes from a fully metallic to semiconducting one with its band gap increasing above 0.3 eV along with an energy shift as a linear function of the Si dopant density. The gap opening mechanism is suggested to be related to the ordering of the impurities.
|Subjects:||Physical Science > Nanophysics|
Physical Science > Nano objects
|Deposited By:||Farnush Anwar|
|Deposited On:||09 Jan 2009 14:57|
|Last Modified:||09 Jan 2009 14:57|
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