Nano Archive

Atomic-scale silicon device fabrication

Simmons, M. Y. and Ruess, F. J. and Goh, K. E. J. and Pok, W. and Hallam, T. and Butcher, M. J. and Reusch, T. C. G. and Scappucci, G. (2008) Atomic-scale silicon device fabrication. INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 5 (2-3). pp. 352-369.

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The driving force behind the microelectronics industry is the ability to pack ever more features onto a silicon chip, by continually miniaturising the individual components. However, after 2015 there is no known technological route to reduce device sizes below 10 nm. In this paper we demonstrate a complete fabrication strategy towards atomic-scale device fabrication in silicon using phosphorus as a dopant in combination with scanning probe lithography and high purity crystal growth. Using this process we have fabricated conducting nanoscale wires with widths down to similar to 8 nm, and arrays of P-doped dots in silicon. We will present an overview of devices that have been made with this technology and highlight some of the detailed atomic level understanding of the doping process developed towards atomically precise devices.

Item Type:Article
Uncontrolled Keywords:STM; MBE; silicon; delta-doping; lithography; atomic electronics
Subjects:Material Science > Nanofabrication processes and tools
Physical Science > Nanoelectronics
Material Science > Nanostructured materials
Engineering > Nanotechnology applications in ICT
ID Code:2405
Deposited By:Anuj Seth
Deposited On:17 Dec 2008 11:20
Last Modified:19 Jan 2009 13:45

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