Simmons, M. Y. and Ruess, F. J. and Goh, K. E. J. and Pok, W. and Hallam, T. and Butcher, M. J. and Reusch, T. C. G. and Scappucci, G. (2008) Atomic-scale silicon device fabrication. INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 5 (2-3). pp. 352-369.
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The driving force behind the microelectronics industry is the ability to pack ever more features onto a silicon chip, by continually miniaturising the individual components. However, after 2015 there is no known technological route to reduce device sizes below 10 nm. In this paper we demonstrate a complete fabrication strategy towards atomic-scale device fabrication in silicon using phosphorus as a dopant in combination with scanning probe lithography and high purity crystal growth. Using this process we have fabricated conducting nanoscale wires with widths down to similar to 8 nm, and arrays of P-doped dots in silicon. We will present an overview of devices that have been made with this technology and highlight some of the detailed atomic level understanding of the doping process developed towards atomically precise devices.
|Uncontrolled Keywords:||STM; MBE; silicon; delta-doping; lithography; atomic electronics|
|Subjects:||Material Science > Nanofabrication processes and tools|
Physical Science > Nanoelectronics
Material Science > Nanostructured materials
Engineering > Nanotechnology applications in ICT
|Deposited By:||Anuj Seth|
|Deposited On:||17 Dec 2008 11:20|
|Last Modified:||19 Jan 2009 13:45|
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