Nano Archive

A general rule for nanoelectronic push-pull devices based on source-sigma bridge-drain

de Lima, Denille Brito and Reis, Marcos Allan Leite and de Souza, Fabricio Macedo and Del Nero, Jordan (2008) A general rule for nanoelectronic push-pull devices based on source-sigma bridge-drain. JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 5 (4). pp. 563-566.

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In this paper we show that, beyond the particular models, utilizing an hybrid equilibrium/nonequilibrium methodologies it is possible to create a general model for organics push-pull nanoscale devices within sigma bonds in the backbone. It is shown by direct quantum-mechanic calculations under external electric field and a nonequilibrium calculation based on the ballistic Landauer-Buttiker equation that I-V curves are comparable to the equilibrium charge distribution results. These related models were successfully applied to the alkane-thiol derivatives presenting a bi-directional rectification response with two operational regions and a very low commutation lost, thus revealing important applications for communication technologies. These results could provide novel insights to the emerging and fast growth field of molecular electronics.

Item Type:Article
Uncontrolled Keywords:Landauer formula; push-pull device; donor-sigma bridge-acceptor; coupled quantum mechanics/green function; two-terminal device
Subjects:Physical Science > Nanophysics
Physical Science > Nanoelectronics
ID Code:2393
Deposited By:Anuj Seth
Deposited On:17 Dec 2008 12:20
Last Modified:19 Jan 2009 13:56

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