Nano Archive

Strain-driven electronic band structure modulation of Si nanowires

Hong, Ki-Ha and Kim, Jongseob and Lee, Sung-Hoon and Shin, Jai Kwang (2008) Strain-driven electronic band structure modulation of Si nanowires. NANO LETTERS, 8 (5). pp. 1335-1340.

Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.

Official URL:


One of the major challenges toward Si nanowire (SiNW) based photonic devices is controlling the electronic band structure of the Si nanowire to obtain a direct band gap. Here, we present a new strategy for controlling the electronic band structure of Si nanowires. Our method is attributed to the band structure modulation driven by uniaxial strain. We show that the band structure modulation with lattice strain is strongly dependent on the crystal orientation and diameter of SiNWs. In the case of [100] and [111] SiNWs, tensile strain enhances the direct band gap characteristic, whereas compressive strain attenuates it. [110] SiNWs have a different strain dependence in that both compressive and tensile strain make SiNWs; exhibit an indirect band gap. We discuss the origin of this strain dependence based on the band features of bulk silicon and the wave functions of SiNWs. These results could be helpful for band structure engineering and analysis of SiNWs in nanoscale devices.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Physical Science > Nanoelectronics
Material Science > Nanostructured materials
ID Code:2384
Deposited By:Anuj Seth
Deposited On:17 Dec 2008 13:20
Last Modified:20 Jan 2009 10:25

Repository Staff Only: item control page