Nano Archive

Doping-free fabrication of carbon nanotube based ballistic CMOS devices and circuits

Zhang, Zhiyong and Liang, Xuelei and Wang, Sheng and Yao, Kun and Hu, Youfan and Zhu, Yuzhen and Chen, Qing and Zhou, Weiwei and Li, Yan and Yao, Yagang and Zhang, Jin and Peng, Lian-Mao (2007) Doping-free fabrication of carbon nanotube based ballistic CMOS devices and circuits. NANO LETTERS, 7 (12). pp. 3603-3607.

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Official URL: http://pubs.acs.org/doi/abs/10.1021/nl0717107

Abstract

We have fabricated ballistic n-type carbon nanotube (CNT)-based field-effect transistors (FETs) by contacting semiconducting single wall CNTs using Sc. Together with the demonstrated ballistic p-type CNT FETs using Pd contacts, our work closes the gap for doping-free fabrication of CNT-based ballistic complementary metal-oxide semiconductor (CMOS) devices and circuits. We demonstrated the feasibility of this dopingfree CMOS technology by fabricating a simple CMOS inverter on a SiO2/Si substrate using the back-gate geometry, but in principle much more complicated CMOS circuits may be integrated on a CNT on any suitable insulator substrate using the top-gate geometry and high-kappa dielectrics. This CNT-based CMOS technology only requires the patterning of arrays of parallel semiconducting CNTs with moderately narrow diameter range, for example, 1.6-2.4 nm, which is within the reach of current nanotechnology. This may lead to the integration of CNT-based CMOS devices with increasing complexity and possibly find its way into the computers brain: the logic circuit.

Item Type:Article
Subjects:Physical Science > Nanoelectronics
ID Code:237
Deposited By:Lesley Tobin
Deposited On:18 Dec 2008 12:32
Last Modified:18 Dec 2008 12:33

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