Kranti, Abhinav and Armstrong, G. Alastair (2007) Source/drain extension region engineering in nanoscale double gate SOI MOSFETs: Novel design methodology for low-voltage analog applications. MICROELECTRONIC ENGINEERING, 84 (12). pp. 2775-2784.
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Official URL: http://dx.doi.org/10.1016/j.mee.2007.01.157
The present paper proposes for the first time, a novel design methodology based on the optimization of source/drain extension (SDE) regions to significantly improve the trade-off between intrinsic voltage gain (A(vo)) and cut-off frequency (f(T)) in nanoscale double gate (DG) devices. Our results show that an optimally designed 25 nm gate length SDE region engineered DG MOSFET operating at drain current of 10 mu A/mu m, exhibits up to 65% improvement in intrinsic voltage gain and 85% in cut-off frequency over devices designed with abrupt SIDE regions. The influence of spacer width, lateral source/drain doping gradient and symmetric as well as asymmetrically designed SDE regions on key analog figures of merit (FOM) such as transconductance (g(m)), transconductance-to-current ratio (g(m)/I-ds), Early voltage (V-EA), output conductance (g(ds)) and gate capacitances are examined in detail. The present work provides new opportunities for realizing future low-voltage/low-power analog circuits with nanoscale SDE engineered DG MOSFETs. (C) 2007 Elsevier B.V. All rights reserved.
|Uncontrolled Keywords:||nanoscale double gate SOI MOSFET; source/drain extension region engineering; low-voltage/low-power analog applications; intrinsic voltage gain; early voltage; transconductance-to-current ratio; gate capacitances; cut-off frequency|
|Subjects:||Physical Science > Nanophysics|
Material Science > Nanofabrication processes and tools
Physical Science > Nanoelectronics
Material Science > Nanostructured materials
|Deposited By:||Anuj Seth|
|Deposited On:||17 Dec 2008 15:54|
|Last Modified:||19 Jan 2009 14:32|
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