Autran, Jean-Luc and Munteanu, Daniela (2008) Simulation of electron transport in nanoscale independent-gate Double-Gate devices using a full 2D Green's function approach. JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 5 (6). pp. 1120-1127.
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Official URL: http://www.ingentaconnect.com/content/asp/jctn/200...
Abstract
The electronic transport in independent Double-Gate nanotransistors is theoretically investigated using a self-consistent Poisson-Schrodinger solver based on a two-dimensional (real-space) Non-Equilibrium Green's Function (NEGF) approach and parallelized code architecture. Physical insights concerning the three- and four-terminal operations of these independent-gate devices are provided for long-term technology nodes (5-10 nm channel lengths) and pure ballistic operation.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | double-gate transistors; independent-gate devices; Non-Equilibrium Green's Functions (NEGF); real-space approach (2D); ballistic transport |
| Subjects: | Physical Science > Nanophysics Physical Science > Nanoelectronics Material Science > Nanostructured materials |
| ID Code: | 2340 |
| Deposited By: | Anuj Seth |
| Deposited On: | 18 Dec 2008 11:39 |
| Last Modified: | 19 Jan 2009 14:49 |
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