Nano Archive

Simulation of electron transport in nanoscale independent-gate Double-Gate devices using a full 2D Green's function approach

Autran, Jean-Luc and Munteanu, Daniela (2008) Simulation of electron transport in nanoscale independent-gate Double-Gate devices using a full 2D Green's function approach. JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 5 (6). pp. 1120-1127.

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Official URL: http://www.ingentaconnect.com/content/asp/jctn/200...

Abstract

The electronic transport in independent Double-Gate nanotransistors is theoretically investigated using a self-consistent Poisson-Schrodinger solver based on a two-dimensional (real-space) Non-Equilibrium Green's Function (NEGF) approach and parallelized code architecture. Physical insights concerning the three- and four-terminal operations of these independent-gate devices are provided for long-term technology nodes (5-10 nm channel lengths) and pure ballistic operation.

Item Type:Article
Uncontrolled Keywords:double-gate transistors; independent-gate devices; Non-Equilibrium Green's Functions (NEGF); real-space approach (2D); ballistic transport
Subjects:Physical Science > Nanophysics
Physical Science > Nanoelectronics
Material Science > Nanostructured materials
ID Code:2340
Deposited By:Anuj Seth
Deposited On:18 Dec 2008 11:39
Last Modified:19 Jan 2009 14:49

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