Autran, Jean-Luc and Munteanu, Daniela (2008) Simulation of electron transport in nanoscale independent-gate Double-Gate devices using a full 2D Green's function approach. JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 5 (6). pp. 1120-1127.
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The electronic transport in independent Double-Gate nanotransistors is theoretically investigated using a self-consistent Poisson-Schrodinger solver based on a two-dimensional (real-space) Non-Equilibrium Green's Function (NEGF) approach and parallelized code architecture. Physical insights concerning the three- and four-terminal operations of these independent-gate devices are provided for long-term technology nodes (5-10 nm channel lengths) and pure ballistic operation.
|Uncontrolled Keywords:||double-gate transistors; independent-gate devices; Non-Equilibrium Green's Functions (NEGF); real-space approach (2D); ballistic transport|
|Subjects:||Physical Science > Nanophysics|
Physical Science > Nanoelectronics
Material Science > Nanostructured materials
|Deposited By:||Anuj Seth|
|Deposited On:||18 Dec 2008 11:39|
|Last Modified:||19 Jan 2009 14:49|
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