Nano Archive

Memristive switching mechanism for metal/oxide/metal nanodevices

Yang, J. Joshua and Pickett, Matthew D. and Li, Xuema and Ohlberg, Douglas A. A. and Stewart, Duncan R. and Williams, R. Stanley (2008) Memristive switching mechanism for metal/oxide/metal nanodevices. NATURE NANOTECHNOLOGY, 3 (7). pp. 429-433.

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Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memory and could lead to novel forms of computing. However, progress has been delayed by difficulties in understanding and controlling the coupled electronic and ionic phenomena that dominate the behaviour of nanoscale oxide devices. An analytic theory of the `memristor' (memory-resistor) was first developed from fundamental symmetry arguments in 1971, and we recently showed that memristor behaviour can naturally explain such coupled electron-ion dynamics. Here we provide experimental evidence to support this general model of memristive electrical switching in oxide systems. We have built micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching. We demonstrate that switching involves changes to the electronic barrier at the Pt/TiO2 interface due to the drift of positively charged oxygen vacancies under an applied electric field. Vacancy drift towards the interface creates conducting channels that shunt, or short-circuit, the electronic barrier to switch ON. The drift of vacancies away from the interface annilihilates such channels, recovering the electronic barrier to switch OFF. Using this model we have built TiO2 crosspoints with engineered oxygen vacancy profiles that predictively control the switching polarity and conductance.

Item Type:Article
Subjects:Material Science > Functional and hybrid materials
Material Science > Nanofabrication processes and tools
Material Science > Nanostructured materials
Engineering > Nanotechnology applications in ICT
ID Code:2338
Deposited By:Anuj Seth
Deposited On:18 Dec 2008 11:55
Last Modified:18 Dec 2008 11:55

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