Nano Archive

Electrical properties of Cu doped p-ZnTe nanowires

Huo, H. B. and Dai, Lun and Liu, C and You, L. P. and Yang, W. Q. and Ma, R. M. and Ran, G. Z. and Qin, G. G. (2006) Electrical properties of Cu doped p-ZnTe nanowires. NANOTECHNOLOGY, 17 (24). pp. 5912-5915.

Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.

Official URL: http://www.iop.org/EJ/abstract/0957-4484/17/24/002

Abstract

Single crystalline zincblende p-ZnTe nanowires (NWs) were synthesized via the vapour phase transport method. Based on either as-grown or Cu doped ZnTe NWs, single NW field effect transistors were fabricated and they were used to study the electrical properties of ZnTe NWs. Electrical transport measurements show that the as-grown ZnTe NWs are of p-type and very high resistivity. After 30 min immersion in Cu(NO3)(2) solution, their conductivity can be increased by about three orders of magnitude. The hole concentrations of the p-type ZnTe nanowires could be controlled in a range from 7.0 x 10(17) to 3.5 x 10(18) cm(-3) by changing the immersion duration. The doped p-type ZnTe NWs may have potential applications in nanoscale electronic and optoelectronic devices.

Item Type:Article
Subjects:Physical Science > Nanophysics
Material Science > Nanofabrication processes and tools
Physical Science > Nano objects
Physical Science > Nanoelectronics
Material Science > Nanostructured materials
ID Code:2295
Deposited By:Anuj Seth
Deposited On:18 Dec 2008 16:58
Last Modified:19 Feb 2009 15:19

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