Huo, H. B. and Dai, Lun and Liu, C and You, L. P. and Yang, W. Q. and Ma, R. M. and Ran, G. Z. and Qin, G. G. (2006) Electrical properties of Cu doped p-ZnTe nanowires. NANOTECHNOLOGY, 17 (24). pp. 5912-5915.
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Official URL: http://www.iop.org/EJ/abstract/0957-4484/17/24/002
Abstract
Single crystalline zincblende p-ZnTe nanowires (NWs) were synthesized via the vapour phase transport method. Based on either as-grown or Cu doped ZnTe NWs, single NW field effect transistors were fabricated and they were used to study the electrical properties of ZnTe NWs. Electrical transport measurements show that the as-grown ZnTe NWs are of p-type and very high resistivity. After 30 min immersion in Cu(NO3)(2) solution, their conductivity can be increased by about three orders of magnitude. The hole concentrations of the p-type ZnTe nanowires could be controlled in a range from 7.0 x 10(17) to 3.5 x 10(18) cm(-3) by changing the immersion duration. The doped p-type ZnTe NWs may have potential applications in nanoscale electronic and optoelectronic devices.
| Item Type: | Article |
|---|---|
| Subjects: | Physical Science > Nanophysics Material Science > Nanofabrication processes and tools Physical Science > Nano objects Physical Science > Nanoelectronics Material Science > Nanostructured materials |
| ID Code: | 2295 |
| Deposited By: | Anuj Seth |
| Deposited On: | 18 Dec 2008 16:58 |
| Last Modified: | 19 Feb 2009 15:19 |
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