Atanassova, E. and Paskaleva, A. (2006) Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs. MICROELECTRONICS RELIABILITY, 47 (6). pp. 913-923.
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Official URL: http://dx.doi.org/10.1016/j.microrel.2006.06.006
Abstract
The present status, successes, challenges and future of Ta2O5, and mixed Ta2O5-based high-k layers as active component in storage capacitors of nanoscale DRAMs are discussed. The engineering of new Ta2O5-based dielectrics (doped Ta205 and multicomponent Ta2O5-based high-k dielectrics) as well as of metal/high-k interface in MIM capacitor configuration are identified as critical factors for further reduction of EOT value below 1 nm.
| Item Type: | Article |
|---|---|
| Subjects: | Material Science > Nanostructured materials Engineering > Nanotechnology applications in ICT |
| ID Code: | 2286 |
| Deposited By: | Anuj Seth |
| Deposited On: | 27 May 2009 16:54 |
| Last Modified: | 27 May 2009 16:54 |
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